Thermal stability of a-titanium in contact with titanium nitride
نویسندگان
چکیده
The thermal stability of an a-Ti film in contact with a d-TiN film in the structure of a TiN/Ti/TiN film stack on SiO2 substrates was studied by in situ sheet resistance (Rs) measurement, Auger electron spectroscopy, glancing angle x-ray diffractometry, cross-sectional transmission electron microscopy, scanning electron microscopy, and atomic force microscopy. It was found that nitrogen dissolves from TiN into Ti between 405 and 474 °C and a significant reaction between Ti and TiN results in the formation of e-Ti2N in the temperature range of 505–548 °C. © 1996 American Institute of Physics. @S0021-8979~96!02305-7#
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